Forschung & Entwicklung

Funding Program

H2020-EU.2.1.1.7. - ECSEL

H2020-EU.2.1.1. - INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Topic

ECSEL-2020-1-IA - ECSEL-IA

Improved technology for 3D nanoprinting

GaN4AP project has the ambitious target of making the GaN-based electronics to become the main power active device present in all power converter systems, with the possibility of developing a close-to-zero energy loss power electronic systems.
GaN4AP project will…
1. Develop innovative Power Electronic Systems for power conversion and management with advanced architecture and circuit topology based on state of the art GaN-based High Electron Mobility Transistors (HEMTs) available in a new concept high-frequency packages that can achieve the requested 99% power conversion efficiency.
2. Develop an innovative material (Aluminium Scandium Nitride, AlScN) that combined with advanced growth and process solutions can provide outstanding physical properties for highly efficient power transistors. Therefore, a new HEMT device architecture will be fabricated with much higher current (2x) and power density (2x) than existing transistors.
3. Develop a new generation of vertical power GaN-based devices on MOSFET architecture with vertical p-GaN inversion channel for safe power switching up to 1200 V. We will cover all the production chain from the device design, processing and characterization up to tests in low inductance half bridge power modules and their implementation in high speed power switching systems.
4. Develop a new intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and Monolithic variances, that will allow the generation of E-Mobility power converters. The projects will focus on scalable concept for 48V-12V bidirectional Buck Boost converters for conventional and ADAS applications combining, in a novel wire-bond free package, a state of the art BCD driver & controller along with a common substrate Monolithic 100V e-GaN Half Bridge.
The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries.

Funding Code
Grant agreement ID: 101007310

Funding period
Start date: 1 June 2021

End date: 31 May 2024

Förderprogramm

Verbundprojekt „H2Demo“ des Bundesministeriums für Bildung und Forschung (BMBF) innerhalb des ausgelobten Ideenwettbewerbs „Wasserstoffrepublik Deutschland“

Projektpartner

Fraunhofer-Instituts für Solare Energiesysteme ISE (federführend), AZUR SPACE, Helmholtz Zentrum Berlin, HQ Dielectrics, LayTec AG, Philipps Universität Marburg, Plasmetrex GmbH, SEMPA SYSTEMS GmbH, Technische Universität Ilmenau, Technische Universität München sowie Universität Ulm

Thema

Nachhaltige und umweltverträgliche Herstellung großer Mengen Wasserstoff durch direkte solare Wasserstofferzeugung über photoelektrochemische Prozesse

Darunter versteht man die Absorption des Sonnenlichts in einem Halbleitermaterial, welches selbst eine ausreichend große Photospannung (> 1.6 Volt) generiert, um Wasser direkt in Wasserstoff und Sauerstoff zu zerlegen. Es eignen sich insbesondere Tandem-Absorber, bei denen zwei absorbierende Materialien elektrisch seriell verschaltet werden. Zu den Arbeitspaketen in „H2-Demo“ zählt die Optimierung der III-V Tandem-Absorber, die auf Silicium abgeschieden werden und deren Eigenschaften weiter verbessert und auf die spezifische Anwendung hin optimiert werden müssen.

Seitens der SEMPA SYSTEMS wird für einen neu zu entwickelnden Hochdurchsatz-MOVPE-Reaktor ein innovatives Gasmischsystem nebst Ansteuerung entwickelt und gebaut.

Finanzierung
14 Millionen Euro des BMBF für das Gesamtprojekt

Laufzeit
Frühjahr 2021 – Frühjahr 2026

Funding Program

H2020-EU.3. - PRIORITY 'Societal challenges

H2020-EU.2.1. - INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies

Topic

EIC-FTI-2018-2020 - Fast Track to Innovation (FTI)

Improved technology for 3D nanoprinting

Nanolithography comprises a growing field of techniques within nanotechnology concerning the engineering of structures on a nanometre scale. The field is of particular interest to computer engineering, providing experts the opportunity to create super-high density microprocessors and memory chips. Among the biggest market challenges in the field is reducing costs and time spent on the prototyping and fabrication process as well as being able to utilise a broader range of materials. The EU-funded ATOPLOT project aims to address those challenges and improve the capabilities of the ATLANT3D Nanofabricator for 3D nanoprinting technology.

Funding Code
ID: 950785

Funding period
1 May 2020 to: 30 April 2022